Faculty of Engineering

Dr. Ashraf Mohamed Abdel-Halim HASSAN

Contact Information
Phone Number: 084 6337580 / 084 6337588                          
Fax Number: 084 6334031
E-mail Address: ama05@fayoum.edu.eg
Office: Electric Engineering Bulding - Third Floor
Postal Address: Fayoum - Fayoum University - Faculty of Engineering - Mathematics and Physics Department - POBox: 63514.
Academic Qualifications
B. Sc.: Communication & Electronics - Cairo University - 1998.
M. Sc.: Engineering Physics, Thesis title: "Limiting efficiency and numerical simulation of agraded band gap solar cell"Cairo University - Giza - 2003.
Ph.D.: Engineering Physics - Nagoya Institute of Technology - 2010
Academic Positions
Demonstrator: From 1998 To 2003
Assistant Lecturer: From 2003 To 2011
Lecturer: From 2011 Up Till Now
Research Interests
Deposition of thin films for solar cell applications.
Fabrication - caractrization and numerical modeling of solar cells.
Education
Nagoya Institute of technology, Nagoya, Japan, Oct. 2006- Seb. 2010:PhD in Engineering Physics, 2010. Thesis title:"Electrochemical deposition of InS-based thin films for solar cell applications"
Cairo University, Giza, Egypt: M. Sc. in Engineering Physics, 2003 Thesis title:"Limiting efficiency and numerical simulation of a graded band gap solar cell"
Cairo University, Fayoum, Egypt:Bachelor of Electronics and Electrical communications, 1998.
Subjects to teach
Physics for engineering students.
Quantum physics.
Solid state devices.
Courses related to renewable energy resources.
Solar cells (photovoltaic).
Optoelectronics.
Modern physics.
Computer skills
ICDL - MATLAB - FORTRAN - BASIC.
Awards
Prize of the scientific publishing from Fayoum University - 2010
Award of the president of Nagoya Institute of Technology for the most distinguished 10 students - 2009
Egyptian Government Scholarship for the distinguished graduate student for 4 year to get PhD degree from Japan - 2006 - 2010
Egyptian Government Award for Distinguished Undergraduate Students, Egypt. - 1993 - 1998
Egyptian Engineers syndicate Prize for the excellent students in the Faculties of Engineering. - 1996
Award of the president of Nagoya Institute of Technology for the most distinguished 10 students during the year of 2009.
Researchexpe Experience

Doctoral Research: Department of Engineering Physics, lectronics and Mechanics,Nagoya Institute of Technology, Japan, 2006-2010. (research advisor: Prof. M. Ichimura)

Deposition and characterization of thin Films for solar cell applications based on inorganic Materials from Aqueous Bathes by using wet deposition techniques; namely, Electrochemical, Photoelectrochemical and Chemical Bath Deposition techniques

Fabrication and Characterization of Heterojunction Solar cells using new inorganic materials Based on III-VI and IV-VI materials

Experimental study for the band alignments at the heterojunction interfaces using X-ray Photoelectron Microscope technique (XPS)

Master Research:
- Department of Engineering Physics, Faculty of Engineering, Cairo University, Giza, Egypt.

Theoretical study of the detailed balance limiting efficiency of graded band gap solar cells

Numerical simulator for the graded bandgap solar cells

Teaching Experience

Lecturer:
- Engineering physics - faculty of engineering - Fayoum University - Egypt - 2011-now
- Modern physics - faculty of engineering - Fayoum University - Egypt - 2011-now

Teaching Assistant:
- Engineering physics & mathematics, faculty of engineering, Cairo University, Egypt. 1998-2004.
- Engineering physics & mathematics, faculty of engineering, Fayoum University, Egypt. 2004-2006.

Research Assistant: Nagoya Institute of technology, Japan, 2009.

Publication list

Journals:

A.M.A. Haleem, M. Ichimura, “Experimental determination of band offsets at the SnS/CdS and SnS/InSxOy heterojunctions”, J. Appl. Phys. 107 (2010) 03450.

  A.M.A. Haleem, M. Kato, M. Ichimura, Annealing Study of the electrochemically deposited InSxOy thin film and its photovoltaic application”, IEICE Trans. Electron. E92-C, 12 (2009) 1464.

A.M.A. Haleem, M. Ichimura,“Electrodeposition of wide bandgap InGaxSyOz thin films for solar cell applications”, Materials Science and Engineering: B, 164 (2009) 180-185.

A.M.A. Haleem, M. Ichimura,“Wide bandgap InS-based thin film: deposition, characterization and application for SnS solar cells”, Jpn. J. Appl. Phys. 48 (2009) 035506.

A.M.A. Haleem, M. Ichimura,“Electrochemical deposition of indium sulfide thin films using two-step pulse biasing”, Thin Solid Films 516(2008) 7783-7789.

N.H. Rafat, A.M. Abdel Haleem, S.E.-D. Habib,“Photon recycling in the graded bandgap solar cell”, Progress in Photovoltaics: Research and Applications, 14, Issue 4 (2006) 313-320, published Online: 17 Feb 2006.

N.H. Rafat, A.M. Abdel Haleem, S.E.-D. Habib,““Numerical simulation of the limiting efficiency of the graded bandgap solar cell”, Renewable Energy, 32, Issue 1, (2007) 21-34. CV – Dr. Ashraf Mohamed ABDEL HALEEM

Presentations:

A.M. Abdel Haleem, M. Sugiyama, M. Ichimura, " Sulphurization of the Electrochemically Deposited Indium Sulphide Oxide Thin Film and its Photovoltaic Applications", Materials Sciences and Applications Vol. 3 (2012) 802.

A.M.A. Haleem, M. Ichimura,“A novel highly transparent buffer layer for solar sell applications: based on III-VI materials”, 19th international Photovoltaic Science and Engineering conference (PVSEC19), November 9-13, 2009, ICC Jeju, Korea.

A.M.A. Haleem, M. Ichimura,““Band alignment at a SnS/ InSxOy interface”, 18th International photovoltaic Science and Engineering (PVSEC18), Jan 19-23, 2009, Kolkata, India.

A.M.A. Haleem, M. Ichimura,“Structural, optical and electrical properties of indium sulfide thin films deposited by pulsed electrochemical deposition”, 17th international Photovoltaic Science and Engineering conference, Dec. 3-7, 2007, Fukuoka, Japan.

A.M.A. Haleem, M. Ichimura, “A proposal for Highly Transparent Chalcogenide alloys for thin-film-solar-Cell Applications”,the institute of electronics, information and communication engineers (IEICE; ISSN 0913-5685) Technical report, May 2009, Toyohashi University, Japan, Vol. 109, No. 23, Pages 25-29.

A.M.A. Haleem, M. Ichimura, “Electrochemical deposition of InSxOy thin films using 2-step-pulse voltage”, 69th Autumn Meeting, 2008, the Japan Society of Applied Physics.

A.M.A. Haleem, M. Ichimura, “Energy Band diagram of a SnS/ InSXOy heterojunction revealed using the XPS technique”, 69th Autumn Meeting, 2008, The Japan Society of Applied Physics.

A.M.A. Haleem, M. Ichimura, “Electrochemical deposition of InSX thin films by periodic pulse-form biasing and its characterization”, the institute of electronics, information and communication engineers (IEICE) technical report, May 2007, Shizuka University, Japan, Vol. 107, No. 54, Pages 87-92

A.M.A. Haleem, M. Ichimura, “Energy Band diagram of a SnS/ InSX heterojunction revealed using the XPS technique”, 7th Japan Surface Chemical Conference, Dec. 2007, Nagoya (NIT), Japan.

N.H. Rafat, A.M. Abdel Haleem, S.E.-D. Habib, Habib,“ A numerical simulator for graded-bandgap solar cells” Proceedings of the 15th International Conference ICM 2003, Cairo, Egypt., 9-11 Dec. pp 291 – 294.